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Typical Characteristics (Q2 P-Channel) T J = 25°C unless otherwise noted
10
8
I D = -2.8A
1000
C iss
V DD = -40V
6
V DD = -30V
V DD = -50V
100
C oss
4
2
f = 1MHz
V GS = 0V
C rss
0
0
2
4
6
8
10
12
14
16
10
0.1
1
10
100
Q g , GATE CHARGE(nC)
Figure 21. Gate Charge Characteristics
4
3
10
8
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 22. Capacitance vs Drain
to Source Voltage
V GS = -10V
R θ JC = 3.9 C/W
2
T J = 125 o C
T J =
25 o C
6
4
2
o
V GS = -4.5V
1
0.1
1
10
0
25
50
75
100
125
150
T C , CASE TEMPERATURE ( C )
20
t AV , TIME IN AVALANCHE(ms)
Figure 23. Unclamped Inductive
Switching Capability
o
Figure 24. Maximum Continuous Drain
Current vs Case Temperature
20000
10
10000
V GS = -10V
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
X – o T x
I = I 25 θ JC = -------------------
1 THIS AREA IS
100us
1ms
1000
CURRENT AS FOLLOWS:
SINGLE PULSE
R 3.9 C/W
125
LIMITED BY r ds(on)
SINGLE PULSE
T J = MAX RATED
10ms
100ms
100
T X = 25 o C
R θ JC = 3.9 C/W
0.1
T C = 25 o C
o
DC
10
10
10
10
10
10
0.05
1
10
100
200
10
-6
-5
-4
-3
-2
-1
1
-V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
t, PULSE WIDTH (s)
Figure 26. Single Pulse Maximum Power
Dissipation
FDD3510H Rev.C
8
www.fairchildsemi.com
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